HIGH-FIELD ELECTRON-TRANSPORT PROPERTIES IN AN IN0.52AL0.48AS/IN0.53GA0.47AS/IN0.52AL0.48AS DOUBLE HETEROSTRUCTURE

被引：10

作者：

SHIGEKAWA, N

FURUTA, T

ARAI, K

机构：

[1] NTT LSI Laboratories, Atsugi-shi, Kanagawa, 243-01, 3-1, Morinosato-Wakamiya

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 69卷 / 07期

关键词：

D O I：

10.1063/1.348461

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Effects of the parameters characterizing the electron-transport properties in an In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As double heterostructure are theoretically investigated using the Monte Carlo approach. The calculated results are compared with the previously measured electron velocity versus electric-field relationship for the investigated structure. It is found that the effects of the GAMMA-valley nonparabolicity factor and the intervalley energy separations in In0.53Ga0.47As are the most remarkable within the investigated parameters.

引用

页码：4003 / 4010

页数：8

共 19 条

[1]

CANALI C, 1985, HOT ELECTRON TRANSPO, P87

[2] W-BAND LOW-NOISE INALAS INGAAS LATTICE-MATCHED HEMTS [J].