NEW METHOD FOR THE STUDY OF MIRROR HEATING OF A SEMICONDUCTOR-LASER DIODE AND FOR THE DETERMINATION OF THERMAL-DIFFUSIVITY OF THE ENTIRE STRUCTURE

被引：19

作者：

BERTOLOTTI, M

LIAKHOU, GL

VOTI, RL

SIBILIA, C

SYRBU, A

WANG, RP

机构：

[1] Dipartimento Di Energetica, Università Roma I, Roma

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 18期

关键词：

D O I：

10.1063/1.112713

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new method based on the photothermal deflection technique is described to determine the mirror temperature of a semiconductor laser diode as a function of intensity of drive current. The device's effective thermal diffusivity can also be measured. A short theoretical discussion is presented together with experimental measurements performed on three different kinds of laser diodes. (c) 1994 American Institute of Physics.

引用

页码：2266 / 2268

页数：3

共 8 条

[1] ALFEROV ZH, 1990, APPL PHYS LETT, V57, P27
[2] MIRROR TEMPERATURE OF A SEMICONDUCTOR DIODE-LASER STUDIED WITH A PHOTOTHERMAL DEFLECTION METHOD
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[7] TEST MEASUREMENTS OF THE PHOTOTHERMAL DEFLECTION METHOD TO DETERMINE THE THERMAL-DIFFUSIVITY OF SOLIDS
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TANG, WC
ROSEN, HJ
VETTIGER, P
WEBB, DJ
[J]. APPLIED PHYSICS LETTERS, 1991, 59 (09) : 1005 - 1007

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