A SPECTROSCOPIC STUDY OF NA+-BOUND ELECTRONS AT SI-SIO2 INTERFACES

被引：11

作者：

CHANG, HR ^{[1
]}

KOCH, F ^{[1
]}

机构：

[1] TECH UNIV MUNICH,DEPT PHYS,D-8046 GARCHING,FED REP GER

来源：

关键词：

D O I：

10.1016/0039-6028(82)90576-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：144 / 147

页数：4

共 8 条

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CHANG, HR ;

KOCH, F .

[2] IMPURITY BANDS IN INVERSION-LAYERS [J].

FOWLER, AB ;

HARTSTEIN, A .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1980, 42 (06) :949-959

[3] OXIDE-CHARGE-INDUCED IMPURITY LEVEL IN SILICON INVERSION LAYERS [J].

HARTSTEIN, A ;

FOWLER, AB .

HARTSTEIN, A ;

FOWLER, AB .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (11) :L249-L253

[5]

HARTSTEIN A, 1976, 13TH P INT C PHYS SE, P74

[6]

HARTSTEIN A, 1979, I PHYS C SER, V43, P1001

[7]

MCCOMBE BD, 1979, I PHYS C SERIES, V43, P1227

VINTER, B .