HREM CONTRAST SIMULATIONS FOR COMPOUND SEMICONDUCTORS - A DISCUSSION OF APPROPRIATE IMAGING PARAMETERS

被引：4

作者：

HILLEBRAND, R

SCHEERSCHMIDT, K

机构：

来源：

ULTRAMICROSCOPY | 1989年 / 27卷 / 04期

关键词：

D O I：

10.1016/0304-3991(89)90006-5

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

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页码：375 / 385

页数：11

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[12] OURMAZD A, 1986, DEFECTS SEMICONDUCTO, P735
[13] CALCULATED N-BEAM CRYSTAL-STRUCTURE IMAGES OF OXIDES BASED ON FLUORITE AND REO3 AND INTERPRETATION OF OBSERVED IMAGES
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