GROWTH-MECHANISM IN ATOMIC LAYER EPITAXY .2. A MODEL OF THE GROWTH-PROCESS OF CDTE ON CDTE(111) SUBSTRATES

被引：11

作者：

HERMAN, MA ^{[1
]}

JYLHA, O ^{[1
]}

PESSA, M ^{[1
]}

机构：

[1] TAMPERE UNIV TECHNOL,DEPT PHYS,SF-33101 TAMPERE 10,FINLAND

来源：

CRYSTAL RESEARCH AND TECHNOLOGY | 1986年 / 21卷 / 08期

关键词：

D O I：

10.1002/crat.2170210802

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：969 / 974

页数：6

共 18 条

[1] RATE EXPRESSIONS FOR ADSORPTION AND DESORPTION-KINETICS WITH PRECURSOR STATES AND LATERAL INTERACTIONS [J].

CASSUTO, A ;

KING, DA .

SURFACE SCIENCE, 1981, 102 (2-3) :388-404

[2]

CASSUTO A, 1983, 9 P INT VAC C 5 INT, P179

[3] INTERACTION KINETICS OF AS2 AND GA ON [100] GAAS SURFACES [J].

FOXON, CT ;

JOYCE, BA .

SURFACE SCIENCE, 1977, 64 (01) :293-304

[4] GROWTH AND DOPING OF GALLIUM-ARSENIDE USING MOLECULAR-BEAM EPITAXY (MBE) - THERMODYNAMIC AND KINETIC ASPECTS [J].

HECKINGBOTTOM, R ;

DAVIES, GJ ;

PRIOR, KA .

SURFACE SCIENCE, 1983, 132 (1-3) :375-389

[5] SURFACE-MORPHOLOGY OF CDTE-FILMS GROWN ON CDTE (111) SUBSTRATES BY ATOMIC LAYER EPITAXY [J].

HERMAN, MA ;

VULLI, M ;

PESSA, M .

JOURNAL OF CRYSTAL GROWTH, 1985, 73 (02) :403-406

[6]

HERMAN MA, 1986, CRYST RES TECHNOL, V21

[7] KINETIC STUDIES OF GROWTH OF III-V COMPOUNDS USING MODULATED MOLECULAR-BEAM TECHNIQUES [J].

JOYCE, BA ;

FOXON, CT .

JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) :122-129

[8]

KREUZER HJ, 1985, FARADAY DISCUSS CHEM, V80, P1

[9] FAR FROM EQUILIBRIUM VAPOR-PHASE GROWTH OF LATTICE MATCHED III-V COMPOUND SEMICONDUCTOR INTERFACES - SOME BASIC CONCEPTS AND MONTE-CARLO COMPUTER-SIMULATIONS [J].

MADHUKAR, A .

SURFACE SCIENCE, 1983, 132 (1-3) :344-374

[10] GROWTH OF LOW DISLOCATION DENSITY CDTE-FILMS ON HYDROPLANED CDTE SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J].

MYERS, TH ;

SCHETZINA, JF ;

MAGEE, TJ ;

ORMOND, RD .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (03) :1598-1603

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