GROWTH AND DOPING OF GALLIUM-ARSENIDE USING MOLECULAR-BEAM EPITAXY (MBE) - THERMODYNAMIC AND KINETIC ASPECTS

被引：47

作者：

HECKINGBOTTOM, R

DAVIES, GJ

PRIOR, KA

机构：

来源：

SURFACE SCIENCE | 1983年 / 132卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(83)90548-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：375 / 389

页数：15

共 35 条

[1] INFLUENCE OF GROWTH-CONDITIONS ON TIN INCORPORATION IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY
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[2] VELOCITY DISTRIBUTIONS OF AS2 AND AS4 SCATTERED FROM GAAS
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[3] VAPOR PRESSURES AND PHASE EQUILIBRIA IN GA-AS SYSTEM
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[4] ENHANCEMENT OF ELECTRON-IMPACT IONIZATION IN A SUPER-LATTICE - A NEW AVALANCHE PHOTO-DIODE WITH A LARGE IONIZATION RATE RATIO
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[J]. APPLIED PHYSICS LETTERS, 1982, 40 (01) : 38 - 40
[5] IMPURITY PROFILES OF GAAS EPITAXIAL LAYERS DOPED WITH SN, SI, AND GE GROWN WITH MOLECULAR-BEAM EPITAXY
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[6] P-N JUNCTION FORMATION DURING MOLECULAR-BEAM EPITAXY OF GE-DOPED GAAS
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[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) : 4422 - &
[7] MAGNESIUM-DOPED GAAS AND ALXGA1-XAS BY MOLECULAR-BEAM EPITAXY
CHO, AY
PANISH, MB
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (12) : 5118 - 5123
[8] SN AND TE DOPING OF MOLECULAR-BEAM EPITAXIAL GAAS USING A SNTE SOURCE
COLLINS, DM
MILLER, JN
CHAI, YG
CHOW, R
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) : 3010 - 3018
[9] ELECTROCHEMICAL SULFUR DOPING OF GAAS GROWN BY MOLECULAR-BEAM EPITAXY
DAVIES, GJ
ANDREWS, DA
HECKINGBOTTOM, R
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (12) : 7214 - 7218
[10] DAVIES GJ, 1982, 2ND INT S MBE TOK

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