STILLINGER-WEBER TYPE POTENTIALS IN MONTE-CARLO SIMULATION OF AMORPHOUS-SILICON

被引：20

作者：

DERELI, G

机构：

[1] Department of Physics, Middle East Technical University

来源：

MOLECULAR SIMULATION | 1992年 / 8卷 / 06期

关键词：

STILLINGER-WEBER POTENTIALS; AMORPHOUS SILICON;

D O I：

10.1080/08927029208022490

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The growth of amorphous silicon on a substrate of a two-layer slab of crystalline silicon with various surface indices is simulated with Stillinger-Weber type interatomic potentials. The growth is realized by means of a continuum Monte Carlo method and the radial distribution functions are evaluated for various cases.

引用

页码：351 / 360

页数：10

共 13 条

[1]

[Anonymous], 1986, MONTE CARLO METHODS

[2] INTERATOMIC POTENTIALS FOR SILICON STRUCTURAL ENERGIES [J].