SURFACE-TOPOGRAPHY OF OXIDES ON INP THERMALLY GROWN AT HIGH-TEMPERATURES

被引：9

作者：

MCLAREN, JJ

NELSON, A

GEIB, K

GANN, R

WILMSEN, CW

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1983年 / 1卷 / 03期

关键词：

D O I：

10.1116/1.572174

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1486 / 1490

页数：5

共 10 条

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[6]

WAGER JW, 1980, APPL PHYS LETT, V51, P812

[7] CHEMICAL-COMPOSITION AND FORMATION OF THERMAL AND ANODIC OXIDE-III-V COMPOUND SEMICONDUCTOR INTERFACES [J].

WILMSEN, CW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :279-289

[8] ANALYSIS OF OXIDE-SEMICONDUCTOR INTERFACE USING AUGER AND ESCA AS APPLIED TO INP AND GAAS [J].

WILMSEN, CW ;

KEE, RW .

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[9] OXIDE LAYERS ON 3-5 COMPOUND SEMICONDUCTORS [J].

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[10]

ZETO R, COMMUNICATION

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