CHARACTERIZATION OF DISORDERED BONDS IN SI-IMPLANTED GA0.47IN0.53AS WITH LASER RAMAN-SPECTROSCOPY

被引：6

作者：

KAKIMOTO, K

KATODA, T

机构：

来源：

APPLIED PHYSICS LETTERS | 1983年 / 42卷 / 09期

关键词：

D O I：

10.1063/1.94104

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：811 / 812

页数：2

共 11 条

[1]

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[3]

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[4] A HIGH-GAIN IN0.53GA0.47AS-INP AVALANCHE PHOTO-DIODE WITH NO TUNNELING LEAKAGE CURRENT [J].

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[5]

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[8] DOUBLE HETEROSTRUCTURE GA0.47IN0.53AS MESFETS BY MBE [J].

OHNO, H ;

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EASTMAN, LF .

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[9]

PHILLIPS JC, 1973, BONDS BANDS SEMICOND, P49

[10] DISORDER ACTIVATED RAMAN-SCATTERING IN GA1-XALXAS ALLOYS [J].

SAINTCRICQ, N ;

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SOLID STATE COMMUNICATIONS, 1981, 39 (11) :1137-1141

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