ION-BEAM ASSISTED ETCHING OF SIO2 AND SI3N4

被引：12

作者：

XU, Z

GAMO, K

NAMBA, S

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 03期

关键词：

D O I：

10.1116/1.584345

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1039 / 1042

页数：4

共 12 条

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[6] CHARACTERISTICS OF MASKLESS ION-BEAM ASSISTED ETCHING OF SILICON USING FOCUSED ION-BEAMS [J].

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[7] CHARACTERISTICS OF ION-BEAM ASSISTED ETCHING OF GAAS USING FOCUSED ION-BEAM - DEPENDENCE ON GAS-PRESSURE [J].

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[8]

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[9] FOCUSED ION-BEAM MILLING OF A SUBMICROMETER APERTURE FOR A HYDRODYNAMIC JOSEPHSON-EFFECT EXPERIMENT [J].

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[10]

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