INSITU DEVELOPMENT OF ION BOMBARDED POLY(METHYLMETHACRYLATE) RESIST IN A REACTIVE GAS AMBIENT

被引:8
作者
GAMO, K
HAMAUZU, H
XU, Z
NAMBA, S
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 03期
关键词
D O I
10.1116/1.584294
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
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页码:989 / 992
页数:4
相关论文
共 13 条
[1]  
Fujiwara S., 1987, Proceedings of the SPIE - The International Society for Optical Engineering, V773, P195, DOI 10.1117/12.940371
[2]  
Gamo K., 1986, Proceedings of the SPIE - The International Society for Optical Engineering, V632, P52, DOI 10.1117/12.963668
[3]  
GAMO K, 1984, 16TH INT C SOL STAT, P31
[4]   NITROCELLULOSE AS A POSITIVE OR NEGATIVE SELF-DEVELOPING RESIST [J].
GEIS, MW ;
RANDALL, JN ;
MOUNTAIN, RW ;
WOODHOUSE, JD ;
BROMLEY, EI ;
ASTOLFI, DK ;
ECONOMOU, NP .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (01) :343-346
[5]   DIRECT ENGRAVING ON POSITIVE RESISTS BY SYNCHROTRON RADIATION [J].
ICHIMURA, S ;
HIRATA, M ;
TANINO, H ;
ATODA, N ;
ONO, M ;
HOH, K .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04) :1076-1079
[6]   DEEP UV SUB-MICRON LITHOGRAPHY BY USING A PULSED HIGH-POWER EXCIMER LASER [J].
KAWAMURA, Y ;
TOYODA, K ;
NAMBA, S .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (09) :6489-6490
[7]   ION-BEAM EXPOSURE OF RESIST MATERIALS [J].
KOMURO, M ;
ATODA, N ;
KAWAKATSU, H .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (03) :483-490
[8]   DIRECT WRITING OF GRATINGS BY ELECTRON-BEAM IN POLY(METHYL METHACRYLATE) OPTICAL-WAVEGUIDES [J].
KOTANI, H ;
KAWABE, M ;
NAMBA, S .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (02) :279-283
[9]   RADIOLYSIS AND RESOLUTION LIMITS OF INORGANIC HALIDE RESISTS [J].
MURAY, A ;
SCHEINFEIN, M ;
ISAACSON, M ;
ADESIDA, I .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (01) :367-372
[10]   PRESSURE AND IRRADIATION ANGLE DEPENDENCE OF MASKLESS ION-BEAM ASSISTED ETCHING OF GAAS AND SI [J].
OCHIAI, Y ;
GAMO, K ;
NAMBA, S .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (01) :67-70