DIRECT ENGRAVING ON POSITIVE RESISTS BY SYNCHROTRON RADIATION

被引：12

作者：

ICHIMURA, S

HIRATA, M

TANINO, H

ATODA, N

ONO, M

HOH, K

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 04期

关键词：

D O I：

10.1116/1.582636

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1076 / 1079

页数：4

共 9 条

[1] X-RAY-LITHOGRAPHY BY SYNCHROTRON RADIATION OF THE SOR-RING STORAGE RING [J].

ARITOME, H ;

MATSUI, S ;

MORIWAKI, K ;

NAMBA, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06) :1939-1941

[2]

ATODA N, UNPUB JPN J APPL PHY

[3] RADIATION-CHEMISTRY OF POLY(METHACRYLATES) [J].

HIRAOKA, H .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1977, 21 (02) :121-130

[4]

HOH K, 1983, JAPANESE J APPLIE S1, V22, P611

[5] MASS-SPECTROSCOPIC AND ELECTRON-SPECTROSCOPIC OBSERVATION OF RESIST DECOMPOSITION BY SYNCHROTRON RADIATION [J].

ICHIMURA, S ;

HIRATA, M ;

TANINO, H ;

ATODA, N ;

HOH, K ;

ONO, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (07) :L406-L408

[6] DEEP UV ABLATION OF PMMA RESISTS [J].

LANAGAN, M ;

LINDSEY, S ;

VISWANATHAN, NS .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (02) :L67-L69

[7] HIGH DOSE ION-IMPLANTATION INTO PHOTORESIST [J].

OKUYAMA, Y ;

HASHIMOTO, T ;

KOGUCHI, T .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (08) :1293-1298

[8] APPLICATION OF SYNCHROTRON RADIATION TO X-RAY LITHOGRAPHY [J].

SPILLER, E ;

EASTMAN, DE ;

FEDER, R ;

GROBMAN, WD ;

GUDAT, W ;

TOPALIAN, J .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (12) :5450-5459

[9] DIRECT ETCHING OF RESISTS BY UV-LIGHT [J].

UENO, N ;

KONISHI, S ;

TANIMOTO, K ;

SUGITA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (10) :L709-L712

← 1 →