HIGH DOSE ION-IMPLANTATION INTO PHOTORESIST

被引：62

作者：

OKUYAMA, Y

HASHIMOTO, T

KOGUCHI, T

机构：

来源：

关键词：

D O I：

10.1149/1.2131665

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1293 / 1298

页数：6

共 7 条

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BACCARANI, G ;

PICKAR, KA .

[2] DEPLETION-MODE IGFET MADE BY DEEP ION-IMPLANTATION [J].

EDWARDS, JR ;

MARR, G .

[3]

GIBBONS JF, 1975, PROJECTED RANGE STAT

[4]

Hashimoto T., 1976, International Electron Devices Meeting. (Technical digest), P198

IIDA, Y ;

OKABAYASHI, H ;

SUZUKI, K .

[6]

MACPHERSON MR, 1971, APPL PHYS LETT, V18, P502, DOI 10.1063/1.1653513

[7]

OKUYAMA Y, 1973, DENKI KAGAKU, V41, P482