ION-BOMBARDMENT-INDUCED IMPROVEMENT OF PHOTORESIST MASK PROPERTIES FOR RF SPUTTER-ETCHING

被引：17

作者：

IIDA, Y ^{[1
]}

OKABAYASHI, H ^{[1
]}

SUZUKI, K ^{[1
]}

机构：

[1] NIPPON ELECT CO LTD,CENT RES LABS,TAKATSU KU,KAWASAKI 213,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1977年 / 16卷 / 08期

关键词：

D O I：

10.1143/JJAP.16.1313

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1313 / 1318

页数：6

共 12 条

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[4]

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[6]

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[8]

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[9] ION-BEAM ETCHING OF GROOVE PATTERNS INTO GARNET FILMS [J].

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[10] SPURIOUS EFFECTS CAUSED BY CONTINUOUS RADIATION AND EJECTED ELECTRONS IN X-RAY LITHOGRAPHY [J].

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