HEAT-TREATMENT-INDUCED DEFECTS IN LOW-RESISTIVITY SILICON

被引：6

作者：

DANNEFAER, S

PUFF, W

MASCHER, P

KERR, D

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 08期

关键词：

D O I：

10.1063/1.344110

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3526 / 3534

页数：9

共 20 条

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