OUTDIFFUSION AND DIFFUSION MECHANISM OF OXYGEN IN SILICON

被引：56

作者：

LEE, ST

NICHOLS, D

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 09期

关键词：

D O I：

10.1063/1.95969

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1001 / 1003

页数：3

共 15 条

[1] OXIDATION-INDUCED POINT-DEFECTS IN SILICON [J].

ANTONIADIS, DA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (05) :1093-1097

[2] OXIDATION-ENHANCED DIFFUSION OF ARSENIC AND PHOSPHORUS IN NEAR-INTRINSIC [100] SILICON [J].

ANTONIADIS, DA ;

LIN, AM ;

DUTTON, RW .

APPLIED PHYSICS LETTERS, 1978, 33 (12) :1030-1033

[3] SUPERSATURATION OF SELF-INTERSTITIALS AND UNDERSATURATION OF VACANCIES DURING PHOSPHORUS DIFFUSION IN SILICON [J].

FAHEY, P ;

DUTTON, RW ;

HU, SM .

APPLIED PHYSICS LETTERS, 1984, 44 (08) :777-779

[4] QUANTITATIVE MODEL FOR DIFFUSION OF PHOSPHORUS IN SILICON AND EMITTER DIP EFFECT [J].

FAIR, RB ;

TSAI, JCC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (07) :1107-1118

[5]

GOSELE U, 1985, IMPURITY DIFFUSION G, V36, P105

[6] SILICON SELF-INTERSTITIAL SUPERSATURATION DURING PHOSPHORUS DIFFUSION [J].

HARRIS, RM ;

ANTONIADIS, DA .

APPLIED PHYSICS LETTERS, 1983, 43 (10) :937-939

[7] THE EFFECTS OF PROCESSING CONDITIONS ON THE OUT-DIFFUSION OF OXYGEN FROM CZOCHRALSKI SILICON [J].

HECK, D ;

TRESSLER, RE ;

MONKOWSKI, J .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (10) :5739-5743

[8] ELECTRICAL AND OPTICAL PROPERTIES OF HEAT-TREATED SILICON [J].

KAISER, W .

PHYSICAL REVIEW, 1957, 105 (06) :1751-1756

[9] KINETICS OF GROWTH OF THE OXIDATION STACKING-FAULTS [J].

LEROY, B .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (12) :7996-8005

[10] EXCESS SOLUBILITY OF OXYGEN IN SILICON DURING STEAM OXIDATION [J].

MIKKELSEN, JC .

APPLIED PHYSICS LETTERS, 1982, 41 (09) :871-873

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