EXCESS SOLUBILITY OF OXYGEN IN SILICON DURING STEAM OXIDATION

被引：41

作者：

MIKKELSEN, JC

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 09期

关键词：

D O I：

10.1063/1.93681

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：871 / 873

页数：3

相关论文

共 16 条

[1] SOLUBILITY OF CARBON IN PULLED SILICON CRYSTALS
BEAN, AR
NEWMAN, RC
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (06) : 1211 - &
[2] DYNAMIC OXYGEN EQUILIBRIUM IN SILICON MELTS DURING CRYSTAL-GROWTH BY THE CZOCHRALSKI TECHNIQUE
CARLBERG, T
KING, TB
WITT, AF
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (01) : 189 - 193
[3] CHARACTERISTICS OF SURFACE-STATE CHARGE (QSS) OF THERMALLY OXIDIZED SILICON
DEAL, BE
SKLAR, M
GROVE, AS
SNOW, EH
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (03) : 266 - +
[4] STRONG ORIENTATION DEPENDENCE OF THE FORMATION OF SURFACE STACKING-FAULTS DURING OXIDATION OF FLOAT-ZONE SILICON
DIELEMAN, J
MARTENS, THG
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (04) : 340 - 341
[5] OXYGEN DIFFUSION IN SILICON AND THE INFLUENCE OF DIFFERENT DOPANTS
GASS, J
MULLER, HH
STUSSI, H
SCHWEITZER, S
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (04) : 2030 - 2037
[6] THE SOLUBILITY OF OXYGEN IN SILICON
HROSTOWSKI, HJ
KAISER, RH
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 9 (3-4) : 214 - 216
[7] Hu S. M., 1981, Defects in Semiconductors. Proceedings of the Materials Research Society Annual Meeting, P333
[8] THE MECHANISMS FOR SILICON OXIDATION IN STEAM AND OXYGEN
LIGENZA, JR
SPITZER, WG
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 14 : 131 - 136
[9] LOW-TEMPERATURE REDISTRIBUTION AND GETTERING OF OXYGEN IN SILICON
MAGEE, TJ
LEUNG, C
KAWAYOSHI, H
FURMAN, B
HOPKINS, CG
EVANS, CA
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) : 5392 - 5394
[10] RECOIL OXYGEN IMPLANTS AND THERMAL REDISTRIBUTION OF OXYGEN IN THROUGH-OXIDE ARSENIC-IMPLANTED SI
MAGEE, TJ
LEUNG, C
KAWAYOSHI, H
PALKUTI, LJ
FURMAN, BK
EVANS, CA
CHRISTEL, LA
GIBBONS, JF
DAY, DS
[J]. APPLIED PHYSICS LETTERS, 1981, 39 (07) : 564 - 566