GAP-STATE DISTRIBUTION IN GE25SE75-XBIX SPUTTERED FILMS BY PHASE-SHIFT ANALYSIS OF MODULATED PHOTOCURRENTS

被引：8

作者：

KOUNAVIS, P

MYTILINEOU, E

机构：

[1] Physics Department, University of Patras

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1991年 / 137卷

关键词：

D O I：

10.1016/S0022-3093(05)80279-0

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The phase shift analysis of modulated photocurrents is used to determine the density of states of sputtered Ge25Se75-xBix films where x = 5,6,7(p-type), 10 and 13 (n-type). The increase of the Bi concentration influences differently the deep states at the valence and the conduction band tails, while E(F) seems to lie in a minimum of the DOS distribution.

引用

页码：955 / 958

页数：4

共 5 条

[1] BRUGGEMANN R, 1990, PHILOS MAG B, V62, P29
[2] DRIFT MOBILITY AND PHOTOCONDUCTIVITY FOR P-TYPE AND N-TYPE SPUTTERED GE25SE75-XBIX FILMS
KOUNAVIS, P
MYTILINEOU, E
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[3] A STUDY OF N-TYPE CONDUCTION IN AMORPHOUS-CHALCOGENIDE SPUTTERED FILMS
MYTILINEOU, E
KOUNAVIS, P
CHAO, BS
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[4] ELECTRICAL-PROPERTIES OF GLASSES IN THE GE-BI-SB-SE AND GE-BI-S SYSTEMS
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TICHY, L
TRISKA, A
TICHA, H
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 1015 - 1018
[5] PHASE-SHIFT ANALYSIS OF MODULATED PHOTOCURRENT - ITS APPLICATION TO THE DETERMINATION OF THE ENERGETIC DISTRIBUTION OF GAP STATES
OHEDA, H
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (11) : 6693 - 6700

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