INTERPRETATION OF 1/F NOISE IN PHOSPHORUS-DOPED POLYCRYSTALLINE SILICON FILMS - HOOGES MODEL OF LATTICE SCATTERING

被引：3

作者：

LOH, E ^{[1
]}

机构：

[1] HUGHES AIRCRAFT CO,ELECTROOPT & DATA SYST GRP,EL SEGUNDO,CA 90245

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 56卷 / 10期

关键词：

D O I：

10.1063/1.333781

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3022 / 3023

页数：2

共 9 条

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[7] INTERPRETATION OF DC CHARACTERISTICS OF PHOSPHORUS-DOPED POLYCRYSTALLINE SILICON FILMS - CONDUCTION ACROSS LOW-BARRIER GRAIN-BOUNDARIES [J].

LOH, E .

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[8] PHOSPHORUS DOPING OF LOW-PRESSURE CHEMICALLY VAPOR-DEPOSITED SILICON FILMS [J].

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