INTERPRETATION OF DC CHARACTERISTICS OF PHOSPHORUS-DOPED POLYCRYSTALLINE SILICON FILMS - CONDUCTION ACROSS LOW-BARRIER GRAIN-BOUNDARIES

被引：6

作者：

LOH, E ^{[1
]}

机构：

[1] HUGHES AIRCRAFT CO, ELECTROOPT & DATA SYST GRP, EL SEGUNDO, CA 90245 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 08期

关键词：

D O I：

10.1063/1.332643

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：4463 / 4466

页数：4

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