ULTRA-THIN FILM A-SI-H TRANSISTORS

被引：8

作者：

TAKEUCHI, Y ^{[1
]}

KATOH, Y ^{[1
]}

UCHIDA, Y ^{[1
]}

MILNE, WI ^{[1
]}

MATSUMURA, M ^{[1
]}

机构：

[1] UNIV CAMBRIDGE,DEPT ENGN,CAMBRIDGE CB2 1PZ,ENGLAND

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1985年 / 77-8卷

关键词：

ACKNOWLEDGEMENT This work is supported by the Ministry of Education; Science and Culture of Japan through a Grant-in aid of scientific research; and also the Ministry and the British Council in Tokyo through the Visiting Professorship Program;

D O I：

10.1016/0022-3093(85)90916-0

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1397 / 1400

页数：4

共 5 条

[1] TWO-DIMENSIONAL NUMERICAL-ANALYSIS OF AMORPHOUS-SILICON FIELD-EFFECT TRANSISTORS [J].

HIROSE, N ;

UCHIDA, Y ;

MATSUMURA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (02) :200-207

[2] THEORETICAL-ANALYSIS OF AMORPHOUS-SILICON FIELD-EFFECT-TRANSISTORS [J].

KISHIDA, S ;

NARUKE, Y ;

UCHIDA, Y ;

MATSUMURA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (03) :511-517

[3]

MATSUMURA M, 1984, 11TH AM SEM TOK, P9

[4]

TAKEUCHI Y, 1985, JPN J APPL PHYS, V24, P834

[5]

TANAKA, 1985, 32ND JSAP M TOK

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