AC SURFACE PHOTOVOLTAGES IN STRONGLY-INVERTED OXIDIZED P-TYPE SILICON-WAFERS

被引：81

作者：

MUNAKATA, C

NISHIMATSU, S

HONMA, N

YAGI, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1984年 / 23卷 / 11期

关键词：

D O I：

10.1143/JJAP.23.1451

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1451 / 1461

页数：11

共 46 条

[1] DETERMINATION OF SURFACE STATE ENERGY POSITIONS BY SURFACE PHOTOVOLTAGE SPECTROMETRY - CDS
BALESTRA, C
LAGOWSKI, J
GATOS, HC
[J]. SURFACE SCIENCE, 1971, 26 (01) : 317 - &
[2] SURFACE BARRIERS AND SURFACE CONDUCTANCE
BARDEEN, J
MORRISON, SR
[J]. PHYSICA, 1954, 20 (10): : 873 - 884
[3] COMBINED MEASUREMENTS OF FIELD EFFECT, SURFACE PHOTO-VOLTAGE AND PHOTOCONDUCTIVITY
BRATTAIN, WH
GARRETT, CGB
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1956, 35 (05): : 1019 - 1040
[4] BRATTAIN WH, 1953, AT&T TECH J, V32, P1
[5] BROUWER G, 1963, PHILIPS RES REP, V18, P432
[6] SPECTRAL DEPENDENCE OF SURFACE PHOTOVOLTAGE IN CDS
CHANNON, MA
MALTBY, JR
REED, CE
SCOTT, CG
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1975, 8 (03) : L39 - L41
[7] CHARACTERISTICS OF SURFACE-STATE CHARGE (QSS) OF THERMALLY OXIDIZED SILICON
DEAL, BE
SKLAR, M
GROVE, AS
SNOW, EH
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (03) : 266 - +
[8] FRANKL DR, 1966, SURF SCI, V6, P115
[9] PHYSICAL THEORY OF SEMICONDUCTOR SURFACES
GARRETT, CGB
BRATTAIN, WH
[J]. PHYSICAL REVIEW, 1955, 99 (02): : 376 - 387
[10] DISTRIBUTION AND CROSS-SECTIONS OF FAST STATES ON GERMANIUM SURFACES
GARRETT, CGB
BRATTAIN, WH
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1956, 35 (05): : 1041 - 1058