STUDIES ON THE MECHANISM OF CHEMICAL SPUTTERING OF SILICON BY SIMULTANEOUS EXPOSURE TO CL-2 AND LOW-ENERGY AR+ IONS

被引：73

作者：

DIELEMAN, J ^{[1
]}

SANDERS, FHM ^{[1
]}

KOLFSCHOTEN, AW ^{[1
]}

ZALM, PC ^{[1
]}

DEVRIES, AE ^{[1
]}

HARING, A ^{[1
]}

机构：

[1] FOM,INST ATOM & MOLEC PHYS,1098 SJ AMSTERDAM,NETHERLANDS

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 05期

关键词：

D O I：

10.1116/1.582997

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1384 / 1392

页数：9

共 27 条

[1] SURFACE STUDIES OF AND A MASS BALANCE MODEL FOR AR+ ION-ASSISTED CL-2 ETCHING OF SI [J].

BARKER, RA ;

MAYER, TM ;

PEARSON, WC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (01) :37-42

[2]

BIERSACK JP, 1932, ION IMPLANTATION TEC, P157

[3] F2 ADSORPTION ON SI OBSERVED WITH SIMS AND QCM [J].

COBURN, JW ;

KNABBE, EA ;

KAY, E .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03) :480-483

[4] PLASMA-ETCHING - DISCUSSION OF MECHANISMS [J].

COBURN, JW ;

WINTERS, HF .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02) :391-403

[5] PLASMA-ASSISTED ETCHING IN MICROFABRICATION [J].

COBURN, JW ;

WINTERS, HF .

ANNUAL REVIEW OF MATERIALS SCIENCE, 1983, 13 :91-116

[6] MAGNETICALLY SUSPENDED CROSS-CORRELATION CHOPPER IN MOLECULAR BEAM-SURFACE EXPERIMENTS [J].

COMSA, G ;

DAVID, R ;

SCHUMACHER, BJ .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1981, 52 (06) :789-797

[7] CHLORINE REACTIONS ON SI (111) SURFACE [J].

FLORIO, JV ;

ROBERTSO.WD .

SURFACE SCIENCE, 1969, 18 (02) :398-&

[8]

GERHARD W, 1975, Z PHYS B CON MAT, V22, P31, DOI 10.1007/BF01325457

[9] ION-ENHANCED GAS-SURFACE CHEMISTRY - THE INFLUENCE OF THE MASS OF THE INCIDENT ION [J].

GERLACHMEYER, U ;

COBURN, JW ;

KAY, E .

SURFACE SCIENCE, 1981, 103 (01) :177-188

[10] ION ENHANCED GAS-SURFACE REACTIONS - A KINETIC-MODEL FOR THE ETCHING MECHANISM [J].

GERLACHMEYER, U .

SURFACE SCIENCE, 1981, 103 (2-3) :524-534

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