F2 ADSORPTION ON SI OBSERVED WITH SIMS AND QCM

[1] ANALYSIS OF MONOMOLECULAR LAYERS OF SOLIDS BY SECONDARY ION EMISSION [J]. ZEITSCHRIFT FUR PHYSIK, 1970, 230 (05): : 403 - +

[2] PLASMA-ETCHING - DISCUSSION OF MECHANISMS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 391 - 403

[3] ION-ASSISTED AND ELECTRON-ASSISTED GAS-SURFACE CHEMISTRY - IMPORTANT EFFECT IN PLASMA-ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3189 - 3196

[4] DONNELLY VM, 1981, SOLID STATE TECHNOL, V24, P161

[5] ION-ENHANCED GAS-SURFACE CHEMISTRY - THE INFLUENCE OF THE MASS OF THE INCIDENT ION [J]. SURFACE SCIENCE, 1981, 103 (01) : 177 - 188

[6] THEORY OF AUGER EJECTION OF ELECTRONS FROM METALS BY IONS [J]. PHYSICAL REVIEW, 1954, 96 (02): : 336 - 365

[7] KNABBE EA, UNPUB

[8] CHEMICAL SPUTTERING OF FLUORINATED SILICON [J]. PHYSICAL REVIEW B, 1981, 23 (02): : 823 - 835

[9] USE OF SECONDARY ION MASS-SPECTROMETRY FOR STUDIES OF OXYGEN-ADSORPTION AND OXIDATION [J]. SURFACE SCIENCE, 1977, 68 (01) : 118 - 129

[1] ANALYSIS OF MONOMOLECULAR LAYERS OF SOLIDS BY SECONDARY ION EMISSION [J]. ZEITSCHRIFT FUR PHYSIK, 1970, 230 (05): : 403 - +

[2] PLASMA-ETCHING - DISCUSSION OF MECHANISMS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 391 - 403

[3] ION-ASSISTED AND ELECTRON-ASSISTED GAS-SURFACE CHEMISTRY - IMPORTANT EFFECT IN PLASMA-ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3189 - 3196

[4] DONNELLY VM, 1981, SOLID STATE TECHNOL, V24, P161

[5] ION-ENHANCED GAS-SURFACE CHEMISTRY - THE INFLUENCE OF THE MASS OF THE INCIDENT ION [J]. SURFACE SCIENCE, 1981, 103 (01) : 177 - 188

[6] THEORY OF AUGER EJECTION OF ELECTRONS FROM METALS BY IONS [J]. PHYSICAL REVIEW, 1954, 96 (02): : 336 - 365

[7] KNABBE EA, UNPUB

[8] CHEMICAL SPUTTERING OF FLUORINATED SILICON [J]. PHYSICAL REVIEW B, 1981, 23 (02): : 823 - 835

[9] USE OF SECONDARY ION MASS-SPECTROMETRY FOR STUDIES OF OXYGEN-ADSORPTION AND OXIDATION [J]. SURFACE SCIENCE, 1977, 68 (01) : 118 - 129