PASSIVATION OF LASER-INDUCED DEFECTS IN SILICON BY LOW-ENERGY HYDROGEN-ION IMPLANTATION

被引：19

作者：

SLAOUI, A

BARHDADI, A

MULLER, JC

SIFFERT, P

机构：

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1986年 / 39卷 / 03期

关键词：

D O I：

10.1007/BF00620729

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：159 / 162

页数：4

共 27 条

[1]

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[2]

[Anonymous], 1982, LASER ANNEALING SEMI

[3]

APPLETON BR, 1982, LASER ELECTRON BEAM

[4]

BARHDADI A, 1984, 2ND P MRS EUR C STRA, P373

[5] HYDROGEN PASSIVATION OF POINT-DEFECTS IN SILICON [J].

BENTON, JL ;

DOHERTY, CJ ;

FERRIS, SD ;

FLAMM, DL ;

KIMERLING, LC ;

LEAMY, HJ .

APPLIED PHYSICS LETTERS, 1980, 36 (08) :670-671

[6]

BENTON JL, 1970, AIP C P, V50, P543

[7] DEPTH DISTRIBUTION OF PHOSPHORUS IONS IMPLANTED INTO SILICON-CRYSTALS [J].

BLOOD, P ;

DEARNALEY, G ;

WILKINS, MA .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1974, 21 (04) :245-251

[8]

FOGARASSY E, 1985, REV PHYS APPL, V20, P525

[9]

KIMERLING LC, 1980, LASER ELECTRON BEAM, P385

[10]

LANG DV, 1979, TOP APPL PHYS, V37, pCH3

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