PASSIVATION OF LASER-INDUCED DEFECTS IN SILICON BY LOW-ENERGY HYDROGEN-ION IMPLANTATION

被引：19

作者：

SLAOUI, A

BARHDADI, A

MULLER, JC

SIFFERT, P

机构：

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1986年 / 39卷 / 03期

关键词：

D O I：

10.1007/BF00620729

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：159 / 162

页数：4

共 27 条

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