ELECTRICAL-PROPERTIES OF SCHOTTKY DIODES ON LASER ANNEALED SILICON SURFACES

被引：4

作者：

PONPON, JP

BUTTUNG, E

SIFFERT, P

机构：

来源：

REVUE DE PHYSIQUE APPLIQUEE | 1982年 / 17卷 / 10期

关键词：

D O I：

10.1051/rphysap:019820017010068700

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：687 / 692

页数：6

共 26 条

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