IMAGING OF INTERFACES IN SEMICONDUCTOR-MATERIALS USING HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY

[1] OLSON GB, 1979, ACTA METALL MATER, V27, P1907, DOI 10.1016/0001-6160(79)90081-6

[2] PAULING L, 1960, NATURE CHEM BOND, P546

[3] Ponce F. A., 1981, Defects in Semiconductors. Proceedings of the Materials Research Society Annual Meeting, P285

[4] NATIVE TELLURIUM DIOXIDE LAYER ON CADMIUM TELLURIDE - A HIGH-RESOLUTION ELECTRON-MICROSCOPY STUDY [J]. APPLIED PHYSICS LETTERS, 1981, 39 (12) : 951 - 953

[5] FAULT-FREE SILICON AT THE SILICON-SAPPHIRE INTERFACE [J]. APPLIED PHYSICS LETTERS, 1982, 41 (04) : 371 - 373

[6] IMAGING OF THE SILICON ON SAPPHIRE INTERFACE BY HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY [J]. APPLIED PHYSICS LETTERS, 1981, 38 (06) : 439 - 441

[7] PONCE FA, UNPUB

[1] OLSON GB, 1979, ACTA METALL MATER, V27, P1907, DOI 10.1016/0001-6160(79)90081-6

[2] PAULING L, 1960, NATURE CHEM BOND, P546

[3] Ponce F. A., 1981, Defects in Semiconductors. Proceedings of the Materials Research Society Annual Meeting, P285

[4] NATIVE TELLURIUM DIOXIDE LAYER ON CADMIUM TELLURIDE - A HIGH-RESOLUTION ELECTRON-MICROSCOPY STUDY [J]. APPLIED PHYSICS LETTERS, 1981, 39 (12) : 951 - 953

[5] FAULT-FREE SILICON AT THE SILICON-SAPPHIRE INTERFACE [J]. APPLIED PHYSICS LETTERS, 1982, 41 (04) : 371 - 373

[6] IMAGING OF THE SILICON ON SAPPHIRE INTERFACE BY HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY [J]. APPLIED PHYSICS LETTERS, 1981, 38 (06) : 439 - 441

[7] PONCE FA, UNPUB