INSITU INVESTIGATION OF THE EARLY STAGE OF THE GROWTH OF A-SI-H ON SILICA AND TIN DIOXIDE SUBSTRATES

被引：14

作者：

ANTOINE, AM

DREVILLON, B

机构：

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1987年 / 97-8卷

关键词：

D O I：

10.1016/0022-3093(87)90336-X

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

收藏

页码：1403 / 1406

页数：4

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[1] INSITU INVESTIGATION OF THE GROWTH OF RF GLOW-DISCHARGE DEPOSITED AMORPHOUS-GERMANIUM AND SILICON FILMS
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[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (07) : 2501 - 2508
[2] ANTOINE AM, 1986, 18TH P INT C PHYS SE, P755
[3] ANTOINE AM, IN PRESS J APPL PHYS
[4] EFFECT OF DEPOSITION CONDITIONS ON THE NUCLEATION AND GROWTH OF GLOW-DISCHARGE A-SI-H
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[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) : 1869 - 1882
[5] FAST POLARIZATION MODULATED ELLIPSOMETER USING A MICROPROCESSOR SYSTEM FOR DIGITAL FOURIER-ANALYSIS
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[J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1982, 53 (07) : 969 - 977