NEW APPROACH TO THE K.P THEORY OF SEMICONDUCTOR SUPERLATTICES

被引：20

作者：

MAILHIOT, C ^{[1
]}

MCGILL, TC ^{[1
]}

SMITH, DL ^{[1
]}

机构：

[1] CALTECH,TJ WATSON SR LAB APPL PHYS,PASADENA,CA 91125

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1984年 / 2卷 / 03期

关键词：

D O I：

10.1116/1.582826

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：371 / 375

页数：5

相关论文

共 11 条

[1] ELECTRONIC-STRUCTURE AND SEMICONDUCTOR-SEMIMETAL TRANSITION IN INAS-GASB SUPER-LATTICES
ALTARELLI, M
[J]. PHYSICAL REVIEW B, 1983, 28 (02) : 842 - 845
[2] THEORETICAL INVESTIGATIONS OF SUPER-LATTICE BAND-STRUCTURE IN THE ENVELOPE-FUNCTION APPROXIMATION
BASTARD, G
[J]. PHYSICAL REVIEW B, 1982, 25 (12) : 7584 - 7597
[3] CASEY HC, 1978, HETEROSTRUCTURE LA A, pCH4
[4] ELECTRONIC SURFACE STATES IN GERMANIUM AND SILICON
CHAVES, CM
MAJLIS, N
CARDONA, M
[J]. SOLID STATE COMMUNICATIONS, 1966, 4 (06) : 271 - &
[5] BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES
COHEN, ML
BERGSTRESSER, TK
[J]. PHYSICAL REVIEW, 1966, 141 (02): : 789 - +
[6] QUANTUM-WELL HETEROSTRUCTURE LASERS
HOLONYAK, N
KOLBAS, RM
DUPUIS, RD
DAPKUS, PD
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (02) : 170 - 186
[7] MAILHIOT C, UNPUB
[8] ELECTRONIC-PROPERTIES OF STRAINED-LAYER SUPER-LATTICES
OSBOURN, GC
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 379 - 382
[9] NEW SEMICONDUCTOR SUPERLATTICE
SAIHALASZ, GA
TSU, R
ESAKI, L
[J]. APPLIED PHYSICS LETTERS, 1977, 30 (12) : 651 - 653
[10] NEW METHOD FOR CALCULATING ELECTRONIC-PROPERTIES OF SUPER-LATTICES USING COMPLEX BAND STRUCTURES
SCHULMAN, JN
CHANG, YC
[J]. PHYSICAL REVIEW B, 1981, 24 (08): : 4445 - 4448