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ASSESSMENT OF ADVANCED LASER STRUCTURES BY PHOTO-LUMINESCENCE
被引:4
作者
:
HATCH, CB
论文数:
0
引用数:
0
h-index:
0
HATCH, CB
MURRELL, DL
论文数:
0
引用数:
0
h-index:
0
MURRELL, DL
WALLING, RH
论文数:
0
引用数:
0
h-index:
0
WALLING, RH
机构
:
来源
:
IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION
|
1982年
/ 129卷
/ 06期
关键词
:
Compendex;
D O I
:
10.1049/ip-i-1.1982.0049
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
PHOTOLUMINESCENCE - Applications
引用
收藏
页码:214 / 217
页数:4
相关论文
共 9 条
[1]
CHIN AK, 1979, APPL PHYS LETT, V34, P476, DOI 10.1063/1.90840
[2]
LOW THRESHOLD CHANNELLED-SUBSTRATE BURIED CRESCENT INGAASP LASERS EMITTING AT 1.54 MU-M
DEVLIN, WJ
论文数:
0
引用数:
0
h-index:
0
DEVLIN, WJ
WALLING, RH
论文数:
0
引用数:
0
h-index:
0
WALLING, RH
FIDDYMENT, PJ
论文数:
0
引用数:
0
h-index:
0
FIDDYMENT, PJ
HOBBS, RE
论文数:
0
引用数:
0
h-index:
0
HOBBS, RE
MURRELL, D
论文数:
0
引用数:
0
h-index:
0
MURRELL, D
SPILLETT, RE
论文数:
0
引用数:
0
h-index:
0
SPILLETT, RE
STEVENTON, AG
论文数:
0
引用数:
0
h-index:
0
STEVENTON, AG
[J].
ELECTRONICS LETTERS,
1981,
17
(18)
: 651
-
653
[3]
OPTICALLY INDUCED LOW PHOTO-LUMINESCENCE REGIONS IN INGAASP
FUKUI, T
论文数:
0
引用数:
0
h-index:
0
机构:
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Tokyo
FUKUI, T
HORIKOSHI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Tokyo
HORIKOSHI, Y
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1979,
18
(01)
: 127
-
132
[4]
ROOM-TEMPERATURE CW OPERATION OF BURIED-STRIPE DOUBLE-HETEROSTRUCTURE GALNASP/INP DIODE-LASERS
HSIEH, JJ
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,LINCOLN LAB,LEXINGTON,MA 02173
MIT,LINCOLN LAB,LEXINGTON,MA 02173
HSIEH, JJ
SHEN, CC
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,LINCOLN LAB,LEXINGTON,MA 02173
MIT,LINCOLN LAB,LEXINGTON,MA 02173
SHEN, CC
[J].
APPLIED PHYSICS LETTERS,
1977,
30
(08)
: 429
-
431
[5]
SPATIALLY RESOLVED PHOTO-LUMINESCENCE CHARACTERIZATION AND OPTICALLY INDUCED DEGRADATION OF IN1-XGAXASYP1-Y DH LASER MATERIAL
JOHNSTON, WD
论文数:
0
引用数:
0
h-index:
0
JOHNSTON, WD
EPPS, GY
论文数:
0
引用数:
0
h-index:
0
EPPS, GY
NAHORY, RE
论文数:
0
引用数:
0
h-index:
0
NAHORY, RE
POLLACK, MA
论文数:
0
引用数:
0
h-index:
0
POLLACK, MA
[J].
APPLIED PHYSICS LETTERS,
1978,
33
(12)
: 992
-
994
[6]
MURRELL DL, 1982, 1 IEE P SOL STAT EL, V129, P209
[7]
HIGH-QUALITY LPE GROWTH OF INGAASP-INP DH LASER WAFERS UNDER A PH3 AMBIENT
TAKAHASHI, S
论文数:
0
引用数:
0
h-index:
0
TAKAHASHI, S
NAGAI, H
论文数:
0
引用数:
0
h-index:
0
NAGAI, H
[J].
JOURNAL OF CRYSTAL GROWTH,
1981,
51
(03)
: 502
-
508
[8]
LOW THRESHOLD 1.55 MU-M INGAASP LASERS DOUBLE CLAD WITH INGAASP CONFINING LAYERS
WESTBROOK, LD
论文数:
0
引用数:
0
h-index:
0
WESTBROOK, LD
NELSON, AW
论文数:
0
引用数:
0
h-index:
0
NELSON, AW
HATCH, CB
论文数:
0
引用数:
0
h-index:
0
HATCH, CB
[J].
ELECTRONICS LETTERS,
1981,
17
(25-2)
: 952
-
954
[9]
YAMAGUCHI A, 1981, FUJITSU SCI TECH J, V17, P71
←
1
→
共 9 条
[1]
CHIN AK, 1979, APPL PHYS LETT, V34, P476, DOI 10.1063/1.90840
[2]
LOW THRESHOLD CHANNELLED-SUBSTRATE BURIED CRESCENT INGAASP LASERS EMITTING AT 1.54 MU-M
DEVLIN, WJ
论文数:
0
引用数:
0
h-index:
0
DEVLIN, WJ
WALLING, RH
论文数:
0
引用数:
0
h-index:
0
WALLING, RH
FIDDYMENT, PJ
论文数:
0
引用数:
0
h-index:
0
FIDDYMENT, PJ
HOBBS, RE
论文数:
0
引用数:
0
h-index:
0
HOBBS, RE
MURRELL, D
论文数:
0
引用数:
0
h-index:
0
MURRELL, D
SPILLETT, RE
论文数:
0
引用数:
0
h-index:
0
SPILLETT, RE
STEVENTON, AG
论文数:
0
引用数:
0
h-index:
0
STEVENTON, AG
[J].
ELECTRONICS LETTERS,
1981,
17
(18)
: 651
-
653
[3]
OPTICALLY INDUCED LOW PHOTO-LUMINESCENCE REGIONS IN INGAASP
FUKUI, T
论文数:
0
引用数:
0
h-index:
0
机构:
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Tokyo
FUKUI, T
HORIKOSHI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Tokyo
HORIKOSHI, Y
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1979,
18
(01)
: 127
-
132
[4]
ROOM-TEMPERATURE CW OPERATION OF BURIED-STRIPE DOUBLE-HETEROSTRUCTURE GALNASP/INP DIODE-LASERS
HSIEH, JJ
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,LINCOLN LAB,LEXINGTON,MA 02173
MIT,LINCOLN LAB,LEXINGTON,MA 02173
HSIEH, JJ
SHEN, CC
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,LINCOLN LAB,LEXINGTON,MA 02173
MIT,LINCOLN LAB,LEXINGTON,MA 02173
SHEN, CC
[J].
APPLIED PHYSICS LETTERS,
1977,
30
(08)
: 429
-
431
[5]
SPATIALLY RESOLVED PHOTO-LUMINESCENCE CHARACTERIZATION AND OPTICALLY INDUCED DEGRADATION OF IN1-XGAXASYP1-Y DH LASER MATERIAL
JOHNSTON, WD
论文数:
0
引用数:
0
h-index:
0
JOHNSTON, WD
EPPS, GY
论文数:
0
引用数:
0
h-index:
0
EPPS, GY
NAHORY, RE
论文数:
0
引用数:
0
h-index:
0
NAHORY, RE
POLLACK, MA
论文数:
0
引用数:
0
h-index:
0
POLLACK, MA
[J].
APPLIED PHYSICS LETTERS,
1978,
33
(12)
: 992
-
994
[6]
MURRELL DL, 1982, 1 IEE P SOL STAT EL, V129, P209
[7]
HIGH-QUALITY LPE GROWTH OF INGAASP-INP DH LASER WAFERS UNDER A PH3 AMBIENT
TAKAHASHI, S
论文数:
0
引用数:
0
h-index:
0
TAKAHASHI, S
NAGAI, H
论文数:
0
引用数:
0
h-index:
0
NAGAI, H
[J].
JOURNAL OF CRYSTAL GROWTH,
1981,
51
(03)
: 502
-
508
[8]
LOW THRESHOLD 1.55 MU-M INGAASP LASERS DOUBLE CLAD WITH INGAASP CONFINING LAYERS
WESTBROOK, LD
论文数:
0
引用数:
0
h-index:
0
WESTBROOK, LD
NELSON, AW
论文数:
0
引用数:
0
h-index:
0
NELSON, AW
HATCH, CB
论文数:
0
引用数:
0
h-index:
0
HATCH, CB
[J].
ELECTRONICS LETTERS,
1981,
17
(25-2)
: 952
-
954
[9]
YAMAGUCHI A, 1981, FUJITSU SCI TECH J, V17, P71
←
1
→