ON THE MOVPE GROWTH OF SELF-ALIGNED LASER STRUCTURES

被引:13
作者
VANTBLIK, HFJ
BOERRIGTERLAMMERS, HJM
机构
关键词
D O I
10.1016/0022-0248(88)90447-2
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:165 / 170
页数:6
相关论文
共 23 条
[1]   SINGLE-LONGITUDINAL-MODE METALORGANIC CHEMICAL-VAPOR-DEPOSITION SELF-ALIGNED GAALAS-GAAS DOUBLE-HETEROSTRUCTURE LASERS [J].
COLEMAN, JJ ;
DAPKUS, PD .
APPLIED PHYSICS LETTERS, 1980, 37 (03) :262-263
[2]   SELF STABILIZATION OF THE FUNDAMENTAL LATERAL-MODE IN INDEX GUIDED SEMICONDUCTOR-LASERS [J].
GARRETT, B ;
WHITEAWAY, JEA .
IEE PROCEEDINGS-J OPTOELECTRONICS, 1987, 134 (01) :11-15
[3]  
Hayashi L., 1972, US Patent, Patent No. [3691476, 3691476 3691476]
[4]   A STUDY OF THE ORIENTATION DEPENDENCE OF GA(AL)AS GROWTH BY MOVPE [J].
HERSEE, SD ;
BARBIER, E ;
BLONDEAU, R .
JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :310-320
[5]  
HORII S, 1986, DEVICES TECHNOLOGIES, V1, P57
[6]   ORIENTATION DEPENDENCE OF GAAS GROWTH IN LOW-PRESSURE OMVPE [J].
KAMON, K ;
SHIMAZU, M ;
KIMURA, K ;
MIHARA, M ;
ISHII, M .
JOURNAL OF CRYSTAL GROWTH, 1987, 84 (01) :126-132
[7]  
KANENO N, 1986, 18TH INT C SOL STAT, P173
[8]   HIGH AL-CONTENT VISIBLE (ALGA)AS MULTIPLE QUANTUM WELL HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
KAWAI, H ;
MATSUDA, O ;
KANEKO, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (11) :L727-L729
[9]  
MIHASHI Y, 1985, 17TH P C SOL STAT DE, P63
[10]  
NAGASAKA H, 1985, 17TH INT C SOL STAT, P67