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ELECTRODEPOSITION AND CHARACTERIZATION OF CUPROUS-OXIDE FILMS

被引：30
作者：
CHATTERJEE, AP
MUKHOPADHYAY, AK
CHAKRABORTY, AK
SASMAL, RN
LAHIRI, SK
机构：
[1] Central Glass and Ceramic Research Institute, Jadavpur, Calcutta
来源：
MATERIALS LETTERS | 1991年 / 11卷 / 10-12期
关键词：
D O I：
10.1016/0167-577X(91)90134-R
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Semiconducting cuprous oxide films were prepared by electrodeposition onto copper substrates from an alkaline CuSO4 bath at temperatures between 40 and 60-degrees-C. The Cu2O films, which were deposited using a potentiostatic method, were found to exhibit exponential growth kinetics. X-ray diffraction studies revealed the formation of only Cu2O films with (200) preferred orientation. The observed current-voltage characteristics of the Cu2O/Cu device structures were found to be similar to that of a metal-insulator-semiconductor (MIS) tunnel diode, indicating the presence of a thin unidentified interfacial insulating layer between the copper substrate and the cuprous oxide film.
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页码：358 / 362
页数：5
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