CHARACTERISTICS OF CR-SIO2-NSI TUNNEL-DIODES

被引：63

作者：

KUMAR, V ^{[1
]}

DAHLKE, WE ^{[1
]}

机构：

[1] LEHIGH UNIV, DEPT ELECT ENGN, BETHLEHEM, PA 18015 USA

来源：

SOLID-STATE ELECTRONICS | 1977年 / 20卷 / 02期

关键词：

D O I：

10.1016/0038-1101(77)90064-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：143 / 152

页数：10

相关论文

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