MICROSCALE CHARACTERIZATION OF HETERO-EPITAXIAL SILICON ON SAPPHIRE BY SCANNING PHOTO-VOLTAGE MEASUREMENTS

被引：4

作者：

LAGOWSKI, J ^{[1
]}

JASTRZEBSKI, L ^{[1
]}

CULLEN, GW ^{[1
]}

机构：

[1] RCA CORP LABS,PRINCETON,NJ 08540

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1982年 / 129卷 / 11期

关键词：

D O I：

10.1149/1.2123629

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2609 / 2613

页数：5

共 9 条

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SOLID-STATE ELECTRONICS, 1978, 21 (11-1) :1563-1569

[2]

DUFFY MT, 1979, J ELECTROCHEM SOC, V126, pC341

[3]

HAM WE, HETEROEPITAXIAL SEMI, pCH6

[4]

HAM WK, UNPUB

[5] RELATIONSHIP BETWEEN CRYSTALLINITY AND ELECTRONIC-PROPERTIES OF SILICON-ON-SAPPHIRE [J].

JASTRZEBSKI, L ;

DUFFY, MT ;

CORBOY, JF ;

CULLEN, GW ;

LAGOWSKI, J .

JOURNAL OF CRYSTAL GROWTH, 1982, 58 (01) :37-43

[6]

JASTRZEBSKI L, 1980, OCT EL SOC M HOLL

[7]

JASTRZEBSKI LL, 1980, RCA REV, V41, P181

[8] ELECTRONIC CHARACTERIZATION OF HETERO-EPITAXIAL SILICON-ON-SAPPHIRE BY SURFACE PHOTO-VOLTAGE SPECTROSCOPY [J].

LAGOWSKI, J ;

JASTRZEBSKI, L ;

CULLEN, GW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (12) :2665-2670

[9]

TAUC J, 1962, PHOTO THERMOELECTRIC, pCH3

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