RELATIONSHIP BETWEEN CRYSTALLINITY AND ELECTRONIC-PROPERTIES OF SILICON-ON-SAPPHIRE

被引：11

作者：

JASTRZEBSKI, L ^{[1
]}

DUFFY, MT ^{[1
]}

CORBOY, JF ^{[1
]}

CULLEN, GW ^{[1
]}

LAGOWSKI, J ^{[1
]}

机构：

[1] MIT, CAMBRIDGE, MA 02139 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 1982年 / 58卷 / 01期

关键词：

D O I：

10.1016/0022-0248(82)90207-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：37 / 43

页数：7

共 17 条

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[4]

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[8] DEEP LEVELS STUDY IN FLOAT ZONE SI USED FOR FABRICATION OF CCD IMAGERS [J].

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[9]

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[10]

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