RELATIONSHIP BETWEEN CRYSTALLINITY AND ELECTRONIC-PROPERTIES OF SILICON-ON-SAPPHIRE

被引:11
作者
JASTRZEBSKI, L [1 ]
DUFFY, MT [1 ]
CORBOY, JF [1 ]
CULLEN, GW [1 ]
LAGOWSKI, J [1 ]
机构
[1] MIT, CAMBRIDGE, MA 02139 USA
关键词
D O I
10.1016/0022-0248(82)90207-X
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:37 / 43
页数:7
相关论文
共 17 条
[11]  
JASTRZEBSKI L, 1980, 157TH EL SOC M ST LO
[12]  
JASTRZEBSKI LL, 1980, RCA REV, V41, P181
[13]  
KIMERLING LC, 1981, 1980 P INT C DEF SEM
[14]   ELECTRONIC CHARACTERIZATION OF HETERO-EPITAXIAL SILICON-ON-SAPPHIRE BY SURFACE PHOTO-VOLTAGE SPECTROSCOPY [J].
LAGOWSKI, J ;
JASTRZEBSKI, L ;
CULLEN, GW .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (12) :2665-2670
[15]   INFLUENCE OF SAPPHIRE SUBSTRATE ORIENTATION ON SOS CRYSTALLINE QUALITY AND SOS MOS-TRANSISTOR MOBILITY [J].
SMITH, RT ;
WEITZEL, CE .
JOURNAL OF CRYSTAL GROWTH, 1982, 58 (01) :61-72
[16]  
SPEAR WE, 1973, 5TH P INT C AM LIQ S, P1
[17]  
ZANZUCCHI PJ, 1978, APPL OPTICS, V17, P3477, DOI 10.1364/AO.17.003477