ELECTRONIC CHARACTERIZATION OF HETERO-EPITAXIAL SILICON-ON-SAPPHIRE BY SURFACE PHOTO-VOLTAGE SPECTROSCOPY

被引：21

作者：

LAGOWSKI, J ^{[1
]}

JASTRZEBSKI, L ^{[1
]}

CULLEN, GW ^{[1
]}

机构：

[1] RCA LABS, PRINCETON, NJ 08540 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1981年 / 128卷 / 12期

关键词：

D O I：

10.1149/1.2127325

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2665 / 2670

页数：6

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