ELECTRONIC CHARACTERIZATION OF HETERO-EPITAXIAL SILICON-ON-SAPPHIRE BY SURFACE PHOTO-VOLTAGE SPECTROSCOPY

被引:21
作者
LAGOWSKI, J [1 ]
JASTRZEBSKI, L [1 ]
CULLEN, GW [1 ]
机构
[1] RCA LABS, PRINCETON, NJ 08540 USA
关键词
D O I
10.1149/1.2127325
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:2665 / 2670
页数:6
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