DERIVATIVE SURFACE PHOTO-VOLTAGE SPECTROSCOPY - NEW APPROACH TO THE STUDY OF ABSORPTION IN SEMICONDUCTORS - GAAS

被引：19

作者：

LAGOWSKI, J

WALUKIEWICZ, W

SLUSARCZUK, MMG

GATOS, HC

机构：

[1] Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge

来源：

JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 07期

关键词：

D O I：

10.1063/1.325610

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Derivative surface photovoltage spectroscopy was achieved with wavelength modulation; it was applied to GaAs and permitted, in a single experiment, the determination of changes in the absorption coefficient over an energy range of 0.5 to 4.3 eV. Photoionization characteristics of deep levels were determined. All known critical-point transitions up to 4.3 eV were clearly obtained from second-derivative spectra. In addition, previously unresolved transitions were observed at about 2.6 eV. Oscillatory photovoltage in high magnetic fields was observed, and it was used to identify the transitions in the vicinity of the energy gap.

引用

页码：5059 / 5061

页数：3

共 20 条

[1] HIGH-RESOLUTION ELECTROREFLECTANCE MEASUREMENTS OF GAAS [J].