DEGRADATION MECHANISM IN SI-DOPED AL/SI CONTACTS AND AN EXTREMELY STABLE METALLIZATION SYSTEM

[1] MODELS FOR CONTACTS TO PLANAR DEVICES [J]. SOLID-STATE ELECTRONICS, 1972, 15 (02) : 145 - &

[2] RF POWER TRANSISTOR METALLIZATION FAILURE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (09) : 800 - &

[3] BLACK JR, 1978, 16TH IEEE ANN P REL, P233

[4] BLACK JR, 1968, FAL EL SOC M, P474

[5] KANAMORI S, 1981, TGSSD8149 PAP

[6] Nanda M., 1970, Electrochemical Society Fall meeting, extended abstracts, P478

[7] ELECTROMIGRATION FAILURE AT ALUMINUM-SILICON CONTACTS [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (06) : 2595 - &

[8] PROKOP GS, 1970, 8TH ANN REL PHYS S P, P121

[9] SLT DEVICE METALLURGY AND ITS MONOLITHIC EXTENSION [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1969, 13 (03) : 226 - &

[1] MODELS FOR CONTACTS TO PLANAR DEVICES [J]. SOLID-STATE ELECTRONICS, 1972, 15 (02) : 145 - &

[2] RF POWER TRANSISTOR METALLIZATION FAILURE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (09) : 800 - &

[3] BLACK JR, 1978, 16TH IEEE ANN P REL, P233

[4] BLACK JR, 1968, FAL EL SOC M, P474

[5] KANAMORI S, 1981, TGSSD8149 PAP

[6] Nanda M., 1970, Electrochemical Society Fall meeting, extended abstracts, P478

[7] ELECTROMIGRATION FAILURE AT ALUMINUM-SILICON CONTACTS [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (06) : 2595 - &

[8] PROKOP GS, 1970, 8TH ANN REL PHYS S P, P121

[9] SLT DEVICE METALLURGY AND ITS MONOLITHIC EXTENSION [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1969, 13 (03) : 226 - &