CHEMICAL ETCHING OF (001) INP BY HBR-H2O2-H2O-HCL SOLUTION

[1] OBSERVATION OF ETCH PITS PRODUCED IN INP BY NEW ETCHANTS [J]. JOURNAL OF CRYSTAL GROWTH, 1979, 46 (06) : 783 - 787

[2] NEW DISLOCATION ETCHANT FOR INP [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (02) : 352 - 354

[3] ETCHING BEHAVIOR OF THE (110) AND (100) SURFACES OF INSB [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (05) : 433 - 436

[4] ETCHING AND INHIBITION OF THE (III) SURFACES OF THE III-V INTERMETALLIC COMPOUNDS - INSB [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 14 : 169 - &

[5] CHARACTERISTICS OF THE (111) SURFACES OF THE III-V INTERMETALLIC COMPOUNDS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (05) : 427 - 433

[6] HUBBER A, 1975, J CRYST GROWTH, V29, P80

[7] HUO DTC, IN PRESS

[8] NEAR-EQUILIBRIUM LPE GROWTH OF LOW THRESHOLD CURRENT-DENSITY IN 1-XGAXASYP1-Y (LAMBDA = 1.35-MU) DH LASERS [J]. APPLIED PHYSICS LETTERS, 1979, 35 (09) : 654 - 656

[1] OBSERVATION OF ETCH PITS PRODUCED IN INP BY NEW ETCHANTS [J]. JOURNAL OF CRYSTAL GROWTH, 1979, 46 (06) : 783 - 787

[2] NEW DISLOCATION ETCHANT FOR INP [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (02) : 352 - 354

[3] ETCHING BEHAVIOR OF THE (110) AND (100) SURFACES OF INSB [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (05) : 433 - 436

[4] ETCHING AND INHIBITION OF THE (III) SURFACES OF THE III-V INTERMETALLIC COMPOUNDS - INSB [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 14 : 169 - &

[5] CHARACTERISTICS OF THE (111) SURFACES OF THE III-V INTERMETALLIC COMPOUNDS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (05) : 427 - 433

[6] HUBBER A, 1975, J CRYST GROWTH, V29, P80

[7] HUO DTC, IN PRESS

[8] NEAR-EQUILIBRIUM LPE GROWTH OF LOW THRESHOLD CURRENT-DENSITY IN 1-XGAXASYP1-Y (LAMBDA = 1.35-MU) DH LASERS [J]. APPLIED PHYSICS LETTERS, 1979, 35 (09) : 654 - 656