CONDUCTANCE FLUCTUATIONS IN LARGE METAL-OXIDE-SEMICONDUCTOR STRUCTURES IN THE VARIABLE-RANGE HOPPING REGIME

被引：18

作者：

POPOVIC, D ^{[1
]}

FOWLER, AB ^{[1
]}

WASHBURN, S ^{[1
]}

STILES, PJ ^{[1
]}

机构：

[1] BROWN UNIV,DEPT PHYS,PROVIDENCE,RI 02912

来源：

PHYSICAL REVIEW B | 1990年 / 42卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.42.1759

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Conductance fluctuations due to variable-range hopping have been studied in 8-mm-wide silicon inversion layers of large area (3.2 mm2). The temperature dependence of the average logarithm of conductance lnG varies with the carrier density Ns from nearly activated to very weak. Fluctuations of lnG with the chemical potential occur on two different scales. The distribution function of the fluctuations in lnG is also analyzed, and the results are consistent with the model of conduction via exponentially rare, highly conducting, quasi-one-dimensional chains of hops. © 1990 The American Physical Society.

引用

页码：1759 / 1762

页数：4

共 24 条

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