RAPID ISOTHERMAL PROCESSING OF PT/TI CONTACTS TO P-TYPE-III-V BINARY AND RELATED TERNARY MATERIALS

被引：17

作者：

KATZ, A ^{[1
]}

CHU, SNG ^{[1
]}

WEIR, BE ^{[1
]}

ABERNATHY, CR ^{[1
]}

HOBSON, WS ^{[1
]}

PEARTON, SJ ^{[1
]}

SAVIN, W ^{[1
]}

机构：

[1] NEW JERSEY INST TECHNOL,NEWARK,NJ 07102

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1992年 / 39卷 / 01期

关键词：

D O I：

10.1109/16.108228

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Results of an extensive study of the interfacial intermixing and interaction of the Pt/Ti bilayer metallization to seven III-V binary and related ternary compound semiconductor systems, as well as the contact electrical properties, are given. Pt/Ti contact to InAs and In0.53Ga0.47As were ohmic as-deposited, while the same metallization scheme on GaAs, GaP, InP, In0.52Al0.48As, and Ga0.7Al0.3As provided a rectifying contact as-deposited. The latter group of contacts, with the exception of InP and GaP, were transformed to an ohmic contact as a result of rapid thermal processing (RTP) at the temperature range of 300 to 450-degrees-C. A linear correlation between the semiconductor bandgap value and the Schottky-barrier height, measured in the Pt/Ti contacts, was observed.

引用

页码：184 / 192

页数：9

共 13 条

[1] INTERFACIAL MICROSTRUCTURE AND ELECTRICAL-PROPERTIES OF THE PT/TI OHMIC CONTACT IN P-IN0.53GA0.47AS FORMED BY RAPID THERMAL-PROCESSING [J].