OHMIC CONTACTS TO HEAVILY CARBON-DOPED P-ALXGA1-XAS

被引：11

作者：

KATZ, A ^{[1
]}

ABERNATHY, CR ^{[1
]}

PEARTON, SJ ^{[1
]}

WEIR, BE ^{[1
]}

SAVIN, W ^{[1
]}

机构：

[1] NEW JERSEY INST TECHNOL,NEWARK,NJ 07102

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 69卷 / 04期

关键词：

D O I：

10.1063/1.348707

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Two different metallization schemes, AuBe(80 nm) and Pt(75 nm)/Ti(50 nm), were investigated as potential ohmic contacts for highly carbon-doped p-Al(x)Ga(1-x)As. The best contact resistance values of 0.015 and 0.025-OMEGA mm were achieved by applying the Pt/Ti scheme onto 1 x 10(20) and 1 x 10(19) cm-3 C-doped AlGaAs, respectively, followed by rapid thermal processing at 450-degrees-C. The AuBe contacts yielded their lowest values of 0.025 and 0.05 OMEGA mm for the same doping levels as a result of rapid thermal processing at 425-degrees-C. The heat treatment at 450-degrees-C caused only limited reactions in both the Pt/Ti and Ti/AlGaAs interfaces and did not lead to significant degradation of the stable microstructure.

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页码：2276 / 2279

页数：4

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