INFRARED-ABSORPTION BAND FOR SUBSTITUTIONAL NITROGEN IN SILICON

[1] ABE T, 1981, SEMICONDUCTOR SILICO, P54

[2] DEEP-LEVEL NITROGEN CENTERS IN LASER-ANNEALED ION-IMPLANTED SILICON [J]. PHYSICAL REVIEW B, 1982, 26 (11): : 6040 - 6052

[3] ITOH H, 1984, 15TH S ION IMPL SUBM

[4] ION-IMPLANTED NITROGEN IN GALLIUM-ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (10) : 4393 - 4399

[5] SUBSTITUTIONAL NITROGEN IMPURITIES IN PULSED-LASER ANNEALED SILICON [J]. APPLIED PHYSICS LETTERS, 1984, 45 (02) : 176 - 178

[6] NEWMAN RC, 1973, INFRARED STUDIES CRY

[7] Stein H. J., 1985, Thirteenth International Conference on Defects in Semiconductors, P839

[1] ABE T, 1981, SEMICONDUCTOR SILICO, P54

[2] DEEP-LEVEL NITROGEN CENTERS IN LASER-ANNEALED ION-IMPLANTED SILICON [J]. PHYSICAL REVIEW B, 1982, 26 (11): : 6040 - 6052

[3] ITOH H, 1984, 15TH S ION IMPL SUBM

[4] ION-IMPLANTED NITROGEN IN GALLIUM-ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (10) : 4393 - 4399

[5] SUBSTITUTIONAL NITROGEN IMPURITIES IN PULSED-LASER ANNEALED SILICON [J]. APPLIED PHYSICS LETTERS, 1984, 45 (02) : 176 - 178

[6] NEWMAN RC, 1973, INFRARED STUDIES CRY

[7] Stein H. J., 1985, Thirteenth International Conference on Defects in Semiconductors, P839