SUBSTITUTIONAL NITROGEN IMPURITIES IN PULSED-LASER ANNEALED SILICON

被引：16

作者：

MURAKAMI, K

ITOH, H

TAKITA, K

MASUDA, K

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 02期

关键词：

D O I：

10.1063/1.95160

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：176 / 178

页数：3

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