DUAL-WAVELENGTH BRAGG REFLECTORS USING GAAS/ALAS MULTILAYERS

被引：8

作者：

LEE, CP ^{[1
]}

TSAI, CM ^{[1
]}

TSANG, JS ^{[1
]}

机构：

[1] NATL CHIAO TUNG UNIV,INST ELECTR,HSINCHU,TAIWAN

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 22期

关键词：

GRATING FILTERS; OPTOELECTRONICS;

D O I：

10.1049/el:19931318

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Dual-wavelength Bragg reflectors have been demonstrated using GaAs/AlAs multilayer heterostructures. Desired reflection bands can be obtained by adding proper phase shifters in a GaAs/AlAs periodic multilayer structure. The structure is based on the digital representation of the addition of two periodic functions.

引用

页码：1980 / 1981

页数：2

共 6 条

[1] RESONANT-CAVITY INGAALAS/INGAAS/INALAS PHOTOTRANSISTORS WITH HIGH-GAIN FOR 1.3-1.6 MU-M [J].