DOMAIN-GROWTH KINETICS OF AG ON GE(111)

被引：21

作者：

BUSCH, H

HENZLER, M

机构：

[1] Institut F̈r Festkörperphysik, Universität Hannover, D-3000 Hannover

来源：

PHYSICAL REVIEW B | 1990年 / 41卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.41.4891

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The growth of 3 × 3 domains due to Ag on a Ge(111)-(2×4)Ag surface has been studied by spot-profile analysis of low-energy electron diffraction. The exact Lorentzian profile allows an evaluation of the kinetics via the half-width. The domain size grows according to a t1/2 law, indicating a growth mode via movement of domain walls. Measurements at several temperatures provide an activation barrier of 0.52 eV. © 1990 The American Physical Society.

引用

页码：4891 / 4896

页数：6

共 28 条

[1] MICROSCOPIC THEORY FOR ANTIPHASE BOUNDARY MOTION AND ITS APPLICATION TO ANTIPHASE DOMAIN COARSENING [J].