ELECTRONIC-STRUCTURE OF (311) ALAS-GAAS SUPERLATTICES

被引：25

作者：

CONTRERASSOLORIO, DA ^{[1
]}

VELASCO, VR ^{[1
]}

GARCIAMOLINER, F ^{[1
]}

机构：

[1] CSIC,INST CIENCIA MAT,E-28006 MADRID,SPAIN

来源：

PHYSICAL REVIEW B | 1993年 / 47卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.47.4651

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electronic structure of (311) AlAs-GaAs superlattices at the GAMMA point of the superlattice is studied for (2,2) less-than-or-equal-to (n, m) less-than-or-equal-to (20,20), where n (m) is the number of principal layers of AlAs (GaAs). The calculations are based on an sp3s* model and on a surface Green-function matching analysis. The evolution of the energy gap versus the variation of n and m and the confinement of the different states are discussed and compared to the case of the (001) AlAs-GaAs superlattices.

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页码：4651 / 4654

页数：4

相关论文

共 24 条

[1]

[Anonymous], 1992, THEORY SINGLE MULTIP

[2] THEORETICAL INVESTIGATIONS OF SUPER-LATTICE BAND-STRUCTURE IN THE ENVELOPE-FUNCTION APPROXIMATION [J].

BASTARD, G .

PHYSICAL REVIEW B, 1982, 25 (12) :7584-7597

[3] FOLDING EFFECTS IN GAAS-ALAS SUPERLATTICES [J].

BREY, L ;

TEJEDOR, C .

PHYSICAL REVIEW B, 1987, 35 (17) :9112-9119

[4] SPIN-ORBIT-SPLITTING IN CRYSTALLINE AND COMPOSITIONALLY DISORDERED SEMICONDUCTORS [J].

CHADI, DJ .

PHYSICAL REVIEW B, 1977, 16 (02) :790-796

[5]

DAHAN G, 1987, PHYS REV B, V35, P6207

[6] ELECTRONIC-STRUCTURE OF (113)-GROWN GAAS-(GAAL)AS SINGLE QUANTUM-WELLS UNDER BIAXIAL STRAIN FIELDS [J].

ELKHALIFI, Y ;

LEFEBVRE, P ;

ALLEGRE, J ;

GIL, B ;

MATHIEU, H ;

FUKUNAGA, T .

SOLID STATE COMMUNICATIONS, 1990, 75 (08) :677-682

[7] OPTICAL-PROPERTIES AND BAND-STRUCTURE OF SHORT-PERIOD GAAS/ALAS SUPERLATTICES [J].

FINKMAN, E ;

STURGE, MD ;

MEYNADIER, MH ;

NAHORY, RE ;

TAMARGO, MC ;

HWANG, DM ;

CHANG, CC .

JOURNAL OF LUMINESCENCE, 1987, 39 (02) :57-74

[8] INTERBAND-TRANSITIONS OF THIN-LAYER GAAS/ALAS SUPERLATTICES [J].

GARRIGA, M ;

CARDONA, M ;

CHRISTENSEN, NE ;

LAUTENSCHLAGER, P ;

ISU, T ;

PLOOG, K .

PHYSICAL REVIEW B, 1987, 36 (06) :3254-3258

[9] MOLECULAR-BEAM EPITAXY GROWTH OF GAAS/ALAS DOUBLE-BARRIER RESONANT TUNNELING DEVICES ON (311)A SUBSTRATES [J].

HENINI, M ;

HAYDEN, RK ;

VALADARES, EC ;

EAVES, L ;

HILL, G ;

PATE, MA .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (02) :267-270

[10] OPTICAL-PROPERTIES OF (AIAS)N(GAAS)N SUPERLATTICES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

ISHIBASHI, A ;

MORI, Y ;

ITABASHI, M ;

WATANABE, N .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (07) :2691-2695