ELECTRONIC-STRUCTURE OF (311) ALAS-GAAS SUPERLATTICES

被引：25

作者：

CONTRERASSOLORIO, DA ^{[1
]}

VELASCO, VR ^{[1
]}

GARCIAMOLINER, F ^{[1
]}

机构：

[1] CSIC,INST CIENCIA MAT,E-28006 MADRID,SPAIN

来源：

PHYSICAL REVIEW B | 1993年 / 47卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.47.4651

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electronic structure of (311) AlAs-GaAs superlattices at the GAMMA point of the superlattice is studied for (2,2) less-than-or-equal-to (n, m) less-than-or-equal-to (20,20), where n (m) is the number of principal layers of AlAs (GaAs). The calculations are based on an sp3s* model and on a surface Green-function matching analysis. The evolution of the energy gap versus the variation of n and m and the confinement of the different states are discussed and compared to the case of the (001) AlAs-GaAs superlattices.

引用

页码：4651 / 4654

页数：4

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